Author Affiliations
Abstract
1 Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering,Tianjin University of Technology, Tianjin 300384, China
2 Research and Development Center of Silicon Devices and Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029, China
Gallium oxide (Ga2O3) films were deposited on singlecrystalline sapphire (0001) substrate by radio frequency (RF) magnetron sputtering technique in the temperature range of 300—500 °C. The microstructure of the β-Ga2O3films were investigated in detail using X-ray diffractometer (XRD) and scanning electron microscope (SEM). The results show that the film prepared at 500 °C exhibits the best crystallinity with a monoclinic structure (β-Ga2O3). Structure analysis reveals a clear out-of-plane orientation of β-Ga2O3(201) || Al2O3(0001). The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared (UV-vis-NIR) spectrophotometer. Therefore, it is hopeful that the β-Ga2O3film can be used in the UV optoelectronic devices.
光电子快报(英文版)
2017, 13(4): 295